Samsung SSD 990 EVO NVME M.2 PCIe 4.0 x4 2 To
- Sequential reading up to 5,000 MB/s
- Intelligent thermal control
- PCIE® 4.0 x4 interfaces, PCIE® 5.0 x2 compatible
Keep one step ahead
The 990 EVO offers improved sequential reading/writing speeds up to 5,000/4 200 MB/s and random reading/writing speeds until
700,000/800,000 IOPS, or 43% more than the 970 EVO plus 2 TB. Win in charge time on your games and access your heavy files more quickly.
Increased energy efficiency
With a remarkable improvement of more than 70 % efficiency compared to the previous model, you can use your computer even longer without worrying about battery life.
In addition, it supports Modern Standby, which allows you to stay connected to the Internet and receive notifications even using low -consumption mode.
Intelligent thermal solution
The heat diffusion label of the 990 EVO facilitates thermal control of the NAND chip. The Samsung cutting -edge thermal control algorithm, associated with the GUARD thermal dynamics, guarantees constant and reliable performance. Keep your performance warm, not your SSD.
Samsung Magician software
Make your SSD work like rollers. Samsung Magician software optimization tools guarantee the best performance of the SSD. It is the safest and easiest way to migrate all your data for an upgrade of the Samsung SSD. Protect your precious data, watch the health of the SSD and get the latest updates.
Life to innovations
For decades, the Flash Nand memory of Samsung has been supplying revolutionary technologies that have changed our daily life. This Flash Nand technology also teams the general public, leaving room for the next big wave of innovation.
| General | |
| Device type: | SSD disc - internal |
| Use | PC and game consoles |
| Storage memory | Samsung V-Nand TLC |
| Ability: | 1 to |
| Sequential reading | Up to 5,000 MB/s |
| Sequential writing | Up to 4,200 MB/s |
| Material encryption: | Yes |
| Encryption algorithm: | Crying AES 256 Bits (Class 0) TCG/OPAL IEEE1667 |
| Format: | M.2 2280 |
| Interface: | PCIe® 4.0 x4 / 5.0 x2 NVME ™ 2.0 |
| Cache memory | HMB (Host Memory Buffer) |
| Features: | Trim support, standby mode, self-garbage collection algorithm, NVM Express (NVME) 1.3C, Samsung V-Nand 3Bit MLC Technology, S.M.A.R.T. |
| Performance | |
| Random writing 4 KB maximum: | Up to 680,000 iops |
| Maximum random reading 4 KB: | Up to 800,000 iops |
| Reliability | |
| MTBF reliability: | 1,500,000 hours |
| Food | |
| Power consumption: | 5.5 Watt (reading) 4.7 Watt (Burst Mode) |
